1/8 june 2000 STW12NC60 n-channel 600v - 0.48 w - 12a to-247 powermesh ? ii mosfet n typical r ds (on) = 0.48 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ? . the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n switch mode power supplies (smps) n high current, high speed switching n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive absolute maximum ratings ( ? )pulse width limited by safe operating area type v dss r ds(on) i d STW12NC60 600v < 0.55 w 12 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 12 a i d drain current (continuos) at t c = 100 c 8a i dm ( l ) drain current (pulsed) 18 a p tot total dissipation at t c =25 c 190 w derating factor 1.52 w/ c dv/dt(1) peak diode recovery voltage slope 3 v/ns t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c (1)i sd 11a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax. to-247 1 2 3 internal schematic diagram
STW12NC60 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.66 c/w rthj-amb thermal resistance junction-ambient max 30 c/w rthc-sink thermal resistance case-sink typ 0.1 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 850 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 50 m a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v, i d =6a 0.48 0.55 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 12 a symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds >i d(on) xr ds(on)max, i d =6a 13 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 2150 pf c oss output capacitance 275 pf c rss reverse transfer capacitance 39 pf
3/8 STW12NC60 thermal impedance safe operating area electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 300v, i d =6a r g = 4.7 w ,v gs = 10v (see test circuit, figure 3) 20 ns t r 15 ns q g total gate charge v dd = 480v, i d =12a, v gs = 10v, r g =4.7 w 65 90 nc q gs gate-source charge 13 nc q gd gate-drain charge 28 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480v, i d =12a, r g = 4.7 w, v gs =10v (see test circuit, figure 5) 14 ns t f fall time 25 ns t c cross-over time 30 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 12 a i sdm (2) source-drain current (pulsed) 48 a v sd (1) forward on voltage i sd =12a,v gs =0 1.6 v t rr reverse recovery time i sd = 12 a, di/dt = 100a/ m s, v dd = 100v, t j = 150 c (see test circuit, figure 5) 590 ns q rr reverse recovery charge 5.6 m c i rrm reverse recovery current 19 a
STW12NC60 4/8 capacitance variations gate charge vs gate-source voltage static drain-source on resistance transconductance transfer characteristics output characteristics
5/8 STW12NC60 normalized gate thereshold voltage vs temp. normalized on resistance vs temperature source-drain diode forward characteristics
STW12NC60 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
STW12NC60 7/8 dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data
STW12NC60 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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